The KIT8020-CRD-5FF0917P-2 may be used to demonstrate high-speed switching performance of Cree’s 3rd Generation (C3M) silicon carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) in a TO-247-4 package. Cree’s new TO-247-4 package provides a separate Kelvin source pin for gate drive signal return which reduces gate ringing and provides clean gate signal. This assembly comes configured as a half bridge circuit with two Cree SiC MOSFETs (P/N: C3M0075120K). The evaluation board may be re-configured by the user into synchronous boost, synchronous buck, inverter and other common power conversion topologies. There is a dedicated gate drive circuit for each SiC MOSFET.
When compared with the earlier series SiC MOSFETs the newer design Cree C3M SiC MOSFET reduces the gate to source voltage (VGS) requirements which reduces overall power losses.
- Evaluate and optimize the steady state and switching performance of Cree’s 3rd generation (C3M) SiC MOSFETs in a TO-247-4 package
- Analysis of half bridge evaluation board in various topologies i.e. Buck converter, Boost converter etc.
- Two dedicated gate drivers available for each (C3M) SiC MOSFET
- Includes (2) 1200V 75mOhm (C3M) SiC MOSFETs in a TO-247-4 Package with the testing hardware
- Documentation includes bill of materials (BOM), schematic, board layout, application note and power point presentation
Comparison between Cree’s C3M and C2M SiC MOSFETs
The main difference between Cree’s generation 3 (C3M) and generation 2 (C2M) SiC MOSFET is the gate to source voltage (VGS) requirements. As shown in Figure 2 and Figure 3, operational values of VGS for C3M are -4V/+15V while operational values of VGS for C2M are -5V/+20V. This reduction in VGS requirements lowers the overall power losses in Cree’s C3M SiC MOSFET.