wireless power components

MSC040SMA120B by Microsemi

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1200V 40mOhm SiC MOSFET for Industrial and Automotive Markets

Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications.


  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant


  • High efficiency to enable lighter/compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership


  • PV inverter, converter and industrial motor drives
  • Smart grid transmission & distribution
  • Induction heating, and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution

Find out more here.