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DC–25 GHz GaAs MMIC Distributed Low Noise Amplifier

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MMA041PP5 by Microsemi

MMA041PP5 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobility transistor (pHEMT) distributed amplifier in a leadless 5 mm × 5 mm surface-mount package that operates between DC and 25 GHz. It is ideal for test instrumentation and communications infrastructure applications. The amplifier provides a flat gain of 17 dB, 2.5 dB noise figure, and 21 dBm of output power at 1 dBm gain compression while requiring only 150 mA from an 7 V supply. Output IP3 is typically 35 dBm. The MMA041PP5 amplifier features RF I/Os that are internally matched to 50 Ohm. It is also available in die form as the MMA041AA.


  • Test and measurement instrumentation
  • Electronic warfare (EW), electronic countermeasures (ECM), and electronic counter-countermeasures (ECCM)
  • Military and space
  • Telecom infrastructure
  • Wideband microwave radios
  • Microwave and millimeter-wave communication systems

Key Features:

  • Frequency range: DC to 25 GHz
  • Flat gain: 17 dB
  • High output IP3: 35 dBm
  • Low noise figure: 2.5 dB at 10 GHz
  • Supply voltage: 7 V at 150 mA
  • 50 Ω matched I/O
  • 32-lead 5 mm × 5 mm × 1.2 mm QFN package

Read more here.