wireless power components
Mar23

Eval Board Showcases GaN-enabling Capabilities of High-speed FET Driver

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Eval Board Showcases GaN-enabling Capabilities of High-speed FET Driver
Evaluation board in full-bridge configuration showcases the PE29102 high-speed GaN FET driver and incorporates GaN Systems' 100 V, 45 A E-HEMTs.

The PE29102/GS61004B evaluation board allows the user to evaluate the PE29102 gate driver in a full-bridge configuration. The PE29102 integrated high-speed driver is designated to control the gates of external power devices, such as gallium nitride (GaN) FETs. The outputs of the PE29102 are capable of providing switching transition speeds in the sub nano-second range for hard switching applications.

The PE29102/GS61004B evaluation kit (EVK) includes the evaluation board schematic, circuit description, a quick start guide and measurement results.

Features:

  • High- and Low-side FET drivers
  • Dead-time control
  • Fast propagation delay, 9 ns
  • Tri-state enable mode
  • Sub-nanosecond rise and fall time
  • 2A/4A peak source/sink current
  • Package – Flip chip

Applications:

  • Class D audio
  • DC–DC / AC–DC converters
  • Wireless charging
  • Envelope tracking
  • LiDAR

PE29102 functional diagram

PE29102 maximum ratings