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Dual SiC MOSFET Driver Reference Design by Microsemi

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Dual SiC MOSFET Driver Reference Design by Microsemi
 Part Number: MSCSICMDD/REF1 - Silicon Carbide Test/Evaluation Products

Microsemi's MSCSICMDD/REF1 is designed to provide a reliable reference driver solution, a means of evaluating SiC MOSFETs in a number of different topologies, and a means to assess device performance for parametric test purposes. The new evaluation board requires only a +24 V power input and is optimized to drive SiC devices at a high speed with desaturation protection.



  • Requires only a 24 V power input.
  • Adjustable –5 V, 20 V output gate drive.
  • Galvanic isolation of more than 2000 V on both gate drivers.
  • Capable of 6 W of gate drive power/side (8 W with modification).
  • Peak output current of up to 30 A.
  • Maximum switching frequency greater than 400 KHz.1
  • Single-ended or RS485/RS422 differential input gate control.
  • Shoot through (short-circuit) protection.
  • ±100 KV/μS capability.
  • Programmable dead time protection.
  • Fault signaling.
  • Under voltage lockout protection.

Download the full PDF document by Microsemi.