wireless power components

Latest News Power

Feb13

White Paper: A Brief Overview of SiC MOSFET Failure Modes and Design Reliability

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White Paper: A Brief Overview of SiC MOSFET Failure Modes and Design Reliability
This paper briefly introduces various aspects which should be considered when implementing Silicon Carbide (SiC) based metal-oxide-semiconductor-field-effect-transistors (MOSFETs) into a design.
Feb13

3kW Bridgeless Totem Pole PFC - GS665BTP-REF

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3kW Bridgeless Totem Pole PFC - GS665BTP-REF
This high-efficiency, bridgeless totem pole PFC design using a GaN enhancement mode HEMT (E-HEMT) from GaN Systems offers 5x power loss improvement and increased efficiency from 96% to 99% versus a standard boost PFC design.
Feb07

Leveraging SiC Schottky Diodes for Industrial/Automotive Applications

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Leveraging SiC Schottky Diodes for Industrial/Automotive Applications
On demand webinar sponsored by Microsemi & Richardson RFPD.
Dec11

Wolfspeed's "Analog Based 2.2 KW High Efficiency CCM Bridgeless Totem Pole PFC"

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Wolfspeed's
Download this application note which discusses the use of the latest SiC MOSFETs in new, low-inductance packaging to design a PFC system.
Oct17

Silicon Carbide Product Selection Guide

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Silicon Carbide Product Selection Guide
Download the latest Silicon Carbide Product Selection Guide from Richardson RFPD
Oct10

1700 V SCALE-iDriver from Power Integrations

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1700 V SCALE-iDriver from Power Integrations

Up to 8 A Single Channel IGBT/MOSFET Gate Driver Providing Basic Galvanic Isolation for 1700 V IGBT and MOSFET.

Oct04

C3M0075120K

Categories // Latest News Power

C3M0075120K

75mOhm 1200V SiC MOSFET TO-263-7 w/ separate source pin C3M0075120J

Aug01

Kendeil's new modular electrolytic capacitors

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Kendeil's new modular electrolytic capacitors
Kendeil's K1M and K2M Modular Electrolytic Capacitors have incredible features compared to standard electrolytic and film capacitors.
Feb13

White Paper: Ground Leakage Current Analysis and Suppression in a 60 kW 5-level T-type Transformerless SiC PV Inverter

Categories // Latest News Power

White Paper: Ground Leakage Current Analysis and Suppression in a 60 kW 5-level T-type Transformerless SiC PV Inverter

This paper demonstrates that 5LT2 topology has advantages to suppress ground leakage current for PV inverter applications.

 

Feb07

GaN Systems Evaluation Board Simplifies MegaHertz Power

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GaN Systems Evaluation Board Simplifies MegaHertz Power
New evaluation board uses the world's fastest combination of GaN Systems power transistors (GS61004B E-HEMT) and Peregrine power drivers (PE29102).
Dec11

On-Demand Webinar: SCALE-iDriver™: Revolutionary Gate Driver ICs Employing FluxLink™ Bi-directional Communication

Categories // Latest News Power

 On-Demand Webinar: SCALE-iDriver™: Revolutionary Gate Driver ICs Employing FluxLink™ Bi-directional Communication
This webinar discusses how to improve reliability and efficiency in driving IGBTs and MOSFETs in a wide array of driver applications. Isolated gate driver solutions which enhance system safety and offer protection features commonly required for medium- and high-voltage applications are featured.
Dec11

Webinar by Wolfspeed

Categories // Latest News Power

Webinar by Wolfspeed

A Cost-effective, Highly Efficient 3-Phase AC/DC Power System For Industrial PFC Applications.

Oct17

10-py096pa035me-l224f18y

Categories // Latest News Power

10-py096pa035me-l224f18y
New flowPACK 1 SiC from Vincotech
Oct04

UJC1220K

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UJC1220K

1200V, 220mOhm max Rdson, SiC Cascode TO-247 by United Silicone Carbide Inc.

Aug07

GaN Systems Evaluation Platform

Categories // Latest News Power

GaN Systems Evaluation Platform
The GS665XXX-EVBDB daughterboard evaluation kits range from 750 W to 2500 W and consist of two GaN Systems 650 V GaN enhancement-mode HEMTs (E-HEMTs) and all necessary circuits, including half-bridge gate drivers, isolated power supplies and optional heatsink to form a functional half-bridge power stage.
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